Electrical properties of metal-diamond-like-nanocomposite (Me-DLN) contacts to 6H SiC

Abstract

We have fabricated tungsten-diamond-like-nanocomposite (W-DLN) Schottky contacts on n-type and p-type 6H SiC (Si-face). The as-deposited n-type and p-type contacts are rectifying and measurement results suggest that the electrical characteristics are dominated by the properties of the tungsten SiC interface. The n-type contacts have a reverse leakage current density of 4.1 × 10−3 Acm−2 and the p-type contacts have a reverse leakage current density of 1.4 × 10−7 Acm−2 at −10 V. The n-type contacts have an current-voltage (I-V) extracted effective ϕBn of 0.7 eV with an ideality factor of 1.2 and a capacitance-voltage (C-V) extracted ϕBn of 1.2 e V. The p-type contacts have an I-V extracted effective ϕBp of 1.8 eV with an ideality factor of 1.7. Non-ideal I-V and C-V characteristics may be due to surface damage during W-DLN deposition.