Abstract
Lithium implantation (40 and 50 keV; doses of 2 × 10 16 and 4 × 10 16 cm −2) has been performed in several synthetic and natural diamond crystals at room temperature (RT) and 850–900 °C (high temperature (HT) implantation). In contrast with the case of the RT implantation, the HT implantation did not result in radiation-induced surface graphitization. The samples implanted at RT and 850 °C were subsequently annealed at 900 °C. Comparison of the electrical properties of the doped crystals shows the dependence of the electrical activation on the annealing temperature. Thermal emf measurements have established that the conductivity is n-type.
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