Abstract
AbstractI–U and I–T measurements have been performed on large‐grain polyerystalline p‐GaP grown by the SSD method or synthesized in a high‐pressure autoclave. There exists a clear correlation between these characteristics and those of corresponding bierystals from which it can be concluded on a strongly unequal division of the applied voltage on both depletion regions of the grain boundaries. On the other hand I–U characteristics of polysilicon mostly are described by a sinh‐behaviour which supposes an equal division of the voltage. These differences are discussed. The I–U characteristics of the polycrystalline GaP at room temperature are governed by thermionie emission and thermionic field emission whereas at low temperatures (and high voltages) tunneling dominates. At high temperatures the influence of grain boundaries disappears.
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