Electrical properties of individual self-assembled GeSi quantum rings

Abstract

The nanoscale electrical properties of self-assembled GeSi quantum rings (QRs) were investigated by conductive scanning probe microscopy at room temperature. The current distribution of individual GeSi QRs measured by conductive atomic force microscopy (CAFM) shows a low conductivity at the central hole as compared to the rim; however, the QRs’ composition distribution obtained by selective chemical etching combined with AFM observation reveals that within the QRs’ central holes, the Ge content is high, which should lead to a high conductivity instead of a low one as observed. Together with the results obtained by scanning capacitance microscopy (SCM) and electrostatic force microscopy (EFM), it is supposed that the GeSi QRs’ electrical properties are mainly determined by the ring-shaped topography, rather than by the complete oxidation of the QRs’ central hole or their composition distributions.