Abstract
Room-temperature electrical resistivity, Hall mobility and Seebeck coefficient measurements on relatively-low-density, hot-pressed, boron-doped Ge20Si80 alloys are reported as functions of 1/RHe in the range 2*1019-3.4*1020 cm-3. The temperature variations of resistivity and Seebeck coefficient are reported over the temperature range 300-1200K and of 1/RHe and the Hall mobility over the range 300-950K. Within experimental error the absolute values and 1/RHe dependence of the Seebeck coefficients are indistinguishable from single-crystal values. Substantial reductions in carrier mobility accompany the hot-pressing method of preparation, although the reduction is not solely due to porosity effects. A simple mixed scattering model is employed in analysing the electrical data and the conclusion reached that assigning a Hall factor of unity leads to an overestimation in carrier concentration by between 30 and 40%.
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