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Abstract
The electrical conductivity of high purity tin dioxide doped with antimony was studied at temperatures of 900 to 1200° C and partial pressures of oxygen between 10−8 and 1 atm. For specimens having a dopant concentration over 1 × 1019Sb cm−3, the electrical conductivity decreased slightly with temperature and independent of oxygen partial pressure. The electrical conductivity of specimens having a dopant concentration under 1 × 10−8Sb cm−3 increased with temperature and with decreasing partial pressure of oxygen. The significance of the dopant and the thermally created defects is discussed.
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