Abstract
Electrical properties of Hg1-x Cdx Te layers grown by low-temperature metalorganic vapor phase epitaxy at 275°C have been studied. Substrates used were (100) GaAs. The precursors used were dimethylcadmium (DMCd), elemental mercury, and ditertiarybutyltelluride. Cadmium composition x of the layers was controlled from 0 to 1 by DMCd flow. Van der Pauw measurements were carried out in the temperature range from 25 to 300 K. For HgTe layers, typical 80 K electron concentration and Hall mobility of 4.4× 1016 cm-3 and 8.0× 104 cm2/V·s were obtained. For CdTe, 300 K hole concentration and hole Hall mobility of 1.2× 1015 cm-3 and 6.5× 101 cm2/V·s were obtained. In the intermediate Cd composition region of x=0.44, 80 K electron concentration of 8.0× 1015 cm-3 and Hall mobility as high as 7.4× 103 cm2/V·s were also obtained. The experimental mobilities were explained by polar-optical phonon and alloy scattering.
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