Abstract
The electrical properties of HfO2/Al2O3 stacked dielectrics on n-type In0.53Ga0.47As were investigated as a function of the atomic layer deposition (ALD) temperature, particularly within the low temperature range from 100 to 200° C. Although the capacitance equivalent oxide thickness increased due to decreases in the dielectric constants of the HfO2 and the Al2O3 films, lowering the ALD temperature to 100° C improved the interface-related electrical characteristics, such as the interface state density and frequency dispersion under accumulation. In particular, a significant reduction in the leakage current was achieved at a similar physical thickness under substrate electron injection conditions, which was probably due to the improved near-interface characteristics enabled by the formation of the gate stack at a temperature of 100° C.
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