Abstract
The conditions for obtaining diode heterostructures of MnS/n-CdZnTe by the method of spray pyrolysis of MnS alabandite thin films on n-CdZnTe crystalline substrates were investigated. Based on the analysis of the temperature dependences of the I-V-characteristics, the mechanisms of the influence of electronic processes on the forward current in the MnS film are established. The mechanisms of current flow at reverse bias are revealed. The conditions for the formation of the energy barrier at the MnS/n-CdZnTe heterojunction and the influence on its parameters of the energy states at the semiconductor interface are studied. Based on the C-V-characteristics, the peculiarities of the distribution of electrically active impurities in the base region are investigated and the interaction of the alabandite film capacitance with the diffusion capacitance of the heterostructure is revealed. The proposed model of the energy diagram of the heterostructure well describes the experimental results.
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