Abstract
The electrical properties of halogen lamp recrystallized silicon films on oxide-coated Si substrates have been investigated by capacitance technique and transport measurements. Bulk and interface defect densities revealed by deep level transient spectroscopy are lower than 5×1011 cm−3 and 1010 eV−1 cm−2, respectively. However, the generation lifetimes on the order of 0.1 μs, obtained from pulsed metal-oxide-semiconductor (MOS) capacitor techniques, cannot be accounted for by bulk or surface generation, given the very low defect densities observed. The source of defects may be the subgrain boundaries. Electron mobility measured from depletion-mode MOS transistors ( μ=700 cm2/V s) is comparable to that obtainable in bulk-type material. Subgrain boundaries do not appear to have a significant effect on carrier transport.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
