Abstract
Ge50-xSb x Te50 and Ge50-xBi x Te50 ternary alloys were synthesized by vacuum melting at 1273 K with the starting materials of Ge, Bi, Sb, and Te. The lattice structures were analyzed based on X-ray diffraction patterns, which could all be indexed to R3m rhombic structure. Electrical properties measurements revealed that the Ge-Sb-Te ternary alloys were p-type semiconductors with high electrical conductivity of 4.5×105 S∙m-1 near room temperature. And the maximum electrical property was obtained at Ge45Sb5Te50, with the power factor of 2.49×10-3 W∙m-1K-2 at 640 K. Due to the existence of secondary phases, the electrical conductivity of Ge-Bi-Te system was lower and Seebeck coefficient was higher comparing with those of Ge-Sb-Te system.
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