Abstract
The electrical properties of Ge crystals and the effective Schottky barrier height (SBH) of NiGe/Ge diodes fabricated by P and/or chalcogen (S, Se, or Te) doping were investigated for Ge n-channel metal–oxide–semiconductor field-effect transistors with a NiGe/n+Ge junction. The electron concentration in Ge was increased more by co-doping with chalcogen and P than by doping with P alone. Moreover, SBH values were decreased in NiGe/nGe diodes and increased in NiGe/pGe diodes compared with undoped NiGe/Ge by both P doping and P and chalcogen co-doping. Co-doping with Te and P was most effective in modifying the SBH.
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