Abstract
Hall coefficient and conductivity of GaP crystals produced by the solution-growth method were measured at temperatures between 4.2°K and 300°K. Activation energies of donors in undoped, Si-doped and S-doped samples are almost the same indicating about 0.10 eV. In Zn-doped Gap, the level of Zn lies 0.031 eV above the valence band. Electron mobility in undoped samples and hole mobility in Zn-doped samples are 140–180 cm2/volt·sec and about 50 cm2/volt·sec respectively at room temperature. These samples exhibited impurity conduction at considerably high temperature, for example, at 50°K for undoped samples, and its characteristics are similar to those of germanium in the metallic and the transition region.
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