Abstract
Measurements of the resistivity and the Hall coefficient versus the temperature (77–300 K) and the magnetic field (0–11 kG) were performed on InAs thin films (100–1500 Å thick) obtained by vacuum evaporation from an electron gun and condensation onto glass substrates at room temperature. Analysis of the electrical results reveals the typical behaviour of disordered structures. The conductivity versus temperature curves exhibit an anomalous sharp variation which appears to separate two temperature ranges characterized by different conductivity slopes. Observation of the samples in a transmission electron microscope reveals the polycrystalline structure of the films. Electron spectroscopy for chemical analysis shows the sample to be non-stoichiometric with an excess of indium in the inner layers and the presence of indium and arsenic oxides at the surface of the films. Numerical analysis, performed with a multiparametric best-fit procedure, shows that the conductivity conforms to the percolation conductivity model but with an exponential temperature dependence, in accordance in the high temperature region with the more recent hypotheses regarding disordered structures.
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