Abstract
The objective of this study is to prepare lead-free thick film resistor (TFR) paste compatible with AlN substrate for hybrid microelectronics. For this purpose, CaO-ZnO-B₂O₃-Al₂O₃-SiO₂ glass system was chosen as a sintering aid of RuO₂. The effects of the weight ratio of CaO to ZnO in glass composition, the glass content and the sintering temperature on the electrical properties of TFR were investigated. RuO₂ as a conductive and glass powder were dispersed in an organic binder to obtain printable paste and then thick-film was formed by screen printing, followed by sintering at the range between 750℃ and 900℃ for 10 min with a heating rate of 50℃/min in an ambient atmosphere. The addition of ZnO to glass composition and sintering at higher temperature resulted in increasing sheet resistance and decreasing temperature coefficient of resistance. Using RuO₂-based resistor paste containing 40 wt%glass of CaO-20.5%ZnO-25%B₂O₃-7%Al₂O₃-15%SiO₂ composition, it is possible to produce thick film resistor on AlN substrate with sheet resistance of 10.6Ω/□ and the temperature coefficient of resistance of 702ppm/℃ after sintering at 850℃.
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