Electrical properties of Dy, Mn Co-doped BiFeO3 thin films prepared by using chemical solution deposition

Abstract

The effects of Dy, Mn alone doping and co-doping on the structural, electrical and ferroelectric properties of BiFeO3 thin films were investigated. (Bi1−x Dy x )(Fe1−y Mn y )O3 thin films, with (x, y) = (0, 0), (1, 0), (0, 1), and (1, 1) denoted by BFO, BDyFO, BFMnO, and BDyFMn, respectively, were prepared by using a chemical solution deposition method. All thin films were annealed at 550 °C for 30 min by using a conventional annealing process under a nitrogen atmosphere for crystallization. Among the thin films, superior ferroelectric properties were observed in the BDyFMn thin film. The BDyFMn thin film exhibited a low leakage current density (1.8 × 10−5 A/cm2), well-saturated hysteresis loops, a large remanent polarization (2P r ) of 80 µC/cm2 (at a 1060-kV/cm applied electric field) and good fatigue endurance.