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Abstract
Electrical conductivity and Hall effect of Mn 0.05Cd 0.95Se have been measured from 40 K to 300 K. The crystals were subjected to different annealings and doping processes. The fitting of the Hall coefficient data to the model based upon a parabolic conduction band and a single ionized donor level yielded the value of the density-of-state mass of the conduction band. A variational calculation of the electron mobility was performed considering the following limiting scattering mechanisms: optical-phonon scattering, acoustic-phonon scattering, piezo-electric scattering and scattering by charge carriers. The results of the calculations are in good agreement with the experiment for Cd-annealed and doped samples. The results of different annealings indicate that the native point defects play an important role in determining electrical properties of Mn 0.05Cd 0.95Se.
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