Abstract
Sulfur doping of diamond samples produced by the hot-filament chemical vapor deposition (CVD) process using carbon disulfide highly diluted in ethanol and hydrogen has been investigated. The polycrystalline morphology observed by Scanning Electron Microscopy (SEM) and the characteristic diamond Raman peak were practically not affected by addition of CS 2 in the range of 0.8–2.0% by volume. The electrical resistivity dependence due to CS 2 addition showed a “down-and-up” curve with minimum resistivity of about 3.6 × 10 −4 Ωcm. Hall mobility as high as 325.9 cm 2V −1s −1 have been achieved. PIXE and XRF measurements showed that sulfur (100–400 ppm) was incorporated during the deposition independent of the CS 2 added. Unintentional contaminations with Si, W, Cu and Cr have been detected. All the samples, measured by hot-point method and Hall effect, showed p-type characteristics.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
