Abstract
Recently, CuZnO (CZO) films attracted more and more attention because of its great potential application in semiconductor devices. ZnO shows n-type conductivity and several elements have been tried to dope in ZnO to improve the electrical properties. This study focused on the transition of the electrical properties of CZO films, and find out at which concentration the conductivity of CZO films will from n-type to p-type. In this study, CZO films were fabricated by ultrasonic spray pyrolysis with copper acetate, zinc acetate, and ammonium acetate precursor solution. The concentration of Cu ions in the CZO films were changed by the concentration ratio between copper acetate and zinc acetate in precursor solutions. Additionally, these samples are measured by Hall Effect measurement, X-ray diffraction analysis, transmittance measurement and photoluminescence measurement. The result shows that when the concentration of copper ions in CZO films at 5%, the conductivity of the CZO films will turn from n-type to p-type.
Highlights
Zinc oxide (ZnO) is a popular material because of its large band gap (3.4 eV) and large exciton binding energy (60 meV) [1,2]
It is important to know the properties of CuZnO thin films; this study investigated CZO thin films doped with different concentrations of Cu ranging from 0% to 6%
As the Cu content of the CZO thin films increases from 1% to 6%, the film band gap increases from 3.02 eV to 3.22 eV
Summary
Zinc oxide (ZnO) is a popular material because of its large band gap (3.4 eV) and large exciton binding energy (60 meV) [1,2] Due to their superior properties such as high crystalline quality, large aspect ratio, and quantum confinement effects [3,4], ZnO nanostructures have attracted great research interest. Different techniques such as molecular beam epitaxy, sputtering, sol-gel processing, vapor deposition, and electrochemical deposition have been employed to fabricate ZnO nanowires and nanorods, which have been widely used in laser devices, gas sensors, ultraviolet–visible light emission devices, and many other applications [5,6,7,8]. These samples were analyzed by Hall effect measurements, X-ray diffraction, transmittance measurements, and photoluminescence measurements
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