Abstract
Cu 2− x Se thin films were evaporated and deposited on glass substrates by a vacuum evaporation method. The films showed a low resistivity p-type conduction. Hole mobility measurements performed on films prepared on substrates at 40 and 200°C gave values of 2–5 cm 2V -1s -1 and 8–15 cm 2V -1s -1 respectively. The films prepared at 40°C have a carrier density of 10 22 cm -3 which is one order of magnitude higher than the carrier density of the films prepared at 200°C. In order to employ the Cu 2− x Se films as a window material in solar cells, the film was deposited on n-type silicon. The electrical and photovoltaic properties of the junction were mainly determined by the corresponding properties of the substrate material. A maximum solar conversion efficiency of 8.8% was obtained.
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