Abstract
The electrical properties of SiTa films of different compositions Si:Ta in the range from 3.4:1 to 1.0:1 were investigated in relation to their applications as interconnects and contact gates in microelectronic circuits. The SiTa films were co- sputtered onto oxidized silicon substrates in a magnetron sputtering system. After they had been annealed in vacuum at 950°C the sheet resistance of the films decreased by a factor of about 3 yielding the best results for relative Si:Ta compositions of about 2:1. Very low values of the temperature coefficient of the resistance, around 10 ppm°C -1, were obtained in the as-deposited films. The sputtered silicides were also characterized by Auger electron spectroscopy, scanning electron microscopy and X-ray diffraction.
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