Abstract
We present an experimental method to measure and extract the interface density of states and fixed charge at the CdS/Cu(In,Ga)Se2 (CIGS) interface using the capacitance–voltage technique applied to a metal–insulator–semiconductor structure. The density of interface states is on the order of 1010 to 1013 cm−2 eV−1. The effective fixed charge at the interface is (7.8 ± 0.3) × 1011 cm−2 and due to positive charges. These electrical properties make the CdS/CIGS interface well passivated and to some extent resemble the SiNx/p-Si interface. We also measure the inversion strength (i.e., Fermi level at the interface) and capture cross-section of interface states from admittance spectroscopy. Inputting the above extracted parameters into the extended Shockley–Read–Hall recombination formulation by Eades and Swanson [J. Appl. Phys. 58, 4267 (1985)], we calculate the surface recombination velocity of mid-to-high 103 cm·s−1, which agrees reasonably with temperature-intensity dependent recombination analysis.
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