Abstract
The electrical properties of carbon nanotube thin-film transistors (CNT–FETs) fabricatedusing plasma-enhanced chemical vapor deposition (PECVD) were studied by scanningprobe microscopy. The measured results suggest the formation of an island structure inthe subthreshold regime and the disappearance of the island structure at theON state. These results were explained by the change in the effective number ofCNTs that contributed to the electrical conduction due to the gate-bias-dependentresistance of the semiconducting CNTs. The results obtained by Monte Carlosimulation revealed similar results. The effects of metallic CNTs with defects andthe scatter of the drain current in the subthreshold regime were also examined.
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