Abstract
CaBi4Ti4O15–Bi4Ti3O12 (CBT–BIT) ceramics were synthesized using a solid state reaction method. The X-ray diffraction (XRD) analysis revealed the existence of bismuth layered perovskite phase with orthorhombic crystal structure. High-resolution transmission electron microscopy (HRTEM) confirmed the alternate arrangement of CBT part and BIT part along c axis in the intergrowth structure. CBT–BIT ceramics showed excellent thermal stability of the dielectric loss (tanδ), but the relaxation of dielectric loss in the 100Hz to 1MHz frequency range had been observed. Meanwhile, an enhanced piezoelectric constant (d33) value of 15pC/N was observed without degradation even the temperature up to 650°C. The dc resistivity (ρdc) of CBT–BIT performed a high value of 5.68×1014(Ωcm) at room temperature (RT). In addition, the ρdc values of CBT–BIT within the temperature range of 100–450°C were close to those of CBT and kept almost one hundred times higher than those of BIT.
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