Abstract
The electrical properties of boron-doped (B-doped) diamond films prepared by microwave plasma chemical vapour deposition (CVD) were measured in the temperature range 77–900 K. The temperature dependence of the electrical resistivity ρ was attributed to the activation energy ∈ h ∼ 0.35 eV in the high temperature region and ∈ 1 ∼ 0.05 eV in the low temperature region. The ∈ 1 value agreed well with the reported value for boron acceptors in diamond. The transitional temperature T 0 at which the value of the activation energy changed from ∈ 1, to ∈ h decreased with increasing substrate temperature ( T s) during CVD diamond growth from 230 K at T s=840°C to 160 K at T S=900°C. An increase in the Hall mobility μ and reduction in the compensation ratio N D/ N A were also observed with increasing substrate temperature. The piezoresistive properties of strain gauges composed of B-doped CVD diamond films were also investigated.
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