Electrical Properties of (Bi,Y)4Ti3O12Thin Films Grown by RF Sputtering Method

Abstract

Yttrium(Y)-substituted bismuth titanate <TEX>$(Bi_{4-x},Y_x)Ti_3O_{12}$</TEX> [x=0, 0.25, 0.5, 0.75, 1](BYT) thin films were deposited using an RF sputtering method on the <TEX>$Pt/TiO_2/SiO_2/Si$</TEX> substrates. The structural properties and electrical properties of yttrium-substituted <TEX>$(Bi_4-xYx)Ti_3O_{12}$</TEX> thin films were analyzed. The remanent polarization of <TEX>$(Bi_4-xYx)Ti_3O_{12}$</TEX> films increased with increasing Y-content. The <TEX>$(Bi_{3.25}Y_{0.75})Ti_3O_{12}$</TEX> films fabricated using a top Au electrode showed saturated polarization-electric field(P-E) switching curves with a remanent polarization(Pr) of <TEX>$8{\mu}C/cm^2$</TEX> and coercive field (Ec) of 53 kV/cm at an applied voltage of 7 V. The <TEX>$(Bi_{3.25}Y_{0.75})Ti_3O_{12}$</TEX> films exhibited fatigue-free behavior up to <TEX>$4.5{\times}10^{11}$</TEX> read/write switching cycles at a frequency of 1MHz.