Abstract

The etch properties of Bi 4− x Eu x Ti 3O 12 (BET) thin films were evaluated with inductively coupled CF 4/Ar plasma. We obtained the maximum etch rate of 78 nm/min at the gas mixing ratio of CF 4 (10%)/Ar (90%). This result may suggest that sputtering by Ar ions is more effective than chemical etching by fluorine atoms for Bi 4− x Eu x Ti 3O 12 (BET) etching. In X-ray photoelectron spectroscopy analysis, non-volatile etch byproducts (EuF 2: 1380 °C, EuF 3: 1276 °C) were observed. After the etching, the electrical properties of BET capacitors were characterized in terms of hysteresis curves, leakage current and switching polarization. After etching in CF 4/Ar plasma, the remanent polarization decreased and the leakage current increased. The etched capacitors in the Ar/CF 4 plasma retained 58% of their original polarization at 10 5 cycles. After the annealing at 600 °C in an O 2 atmosphere for 10 min, the ferroelectric properties were significantly recovered. The degradation of electrical properties after the etching was considered due to the physical effect of ion bombardment and chemical residue contamination.

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