Electrical Properties of (Ba, Sr)TiO3 Films on Ru Bottom Electrodes Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition at Extremely Low Temperature and Rapid Thermal Annealing

Abstract

(Ba, Sr)TiO3 (BST) films were prepared on Ru bottom electrodes by electron cyclotron resonance chemical vapor deposition at extremely low temperature and rapid thermal annealing (RTA). Leakage current characteristics were improved by lowering the BST deposition temperature down to 120°C. (Ba+Sr)-rich films with a (Ba+Sr)/Ti ratio of 1.1–1.5 had lower leakage current densities than stoichiometric and Ti-rich films with a ratio of 0.8–0.9. Cross sectional transmission electron microscopy observations showed that the 120°C-deposited and 700°C-RTA-treated (Ba+Sr)-rich film had a granular structure and smooth interfaces with the electrodes. The stoichiometric and Ti-rich films had columnar structures and larger interface roughness. As a result, low leakage current density less than 10-7 A/cm2 at ±1 V were obtained for 30 nm-thick BST films with a (Ba+Sr)/Ti ratio of 1.1–1.5 by combination of 120°C deposition and 700°C RTA.