Abstract
Capacitance-voltage characteristics of metal-insulator-semiconductor structures of boron nitride on InP have been investigated. The measurements show an overall good capacitance modulation. In accumulation, the frequency dependence of the capacitance of these diodes is consistently attributed to tunneling-related trapping. Bias-temperature-stress (BTS) measurements are used to evaluate the density and sign of the ions which are mobile at 400 K. BTS measurements at 300 K show effects mainly attributed to electron injection from the InP into traps located in the insulator near the interface.
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