Abstract
A HfO2/Al2O3 multilayer has been deposited by an atomic layer deposition (ALD) technique on a hydrogenated-diamond (H-diamond) epitaxial layer. Electrical properties of the ALD-HfO2/Al2O3/H-diamond metal-insulator-semiconductor (MIS) diode have been investigated to compare with those of the single ALD-Al2O3/H-diamond and ALD-HfO2/H-diamond MIS diodes. The leakage current density for the ALD-HfO2/Al2O3/H-diamond MIS diode is smaller than 3.8×10−8A·cm−2 with electric field ranging from −1.6 to 1.0MV·cm−1. The dielectric constant for the ALD-HfO2/Al2O3 multilayer is larger than that for the single ALD-Al2O3. The fixed charge density in the ALD-HfO2/Al2O3/H-diamond structure is much lower than that in the single ALD-HfO2/H-diamond structure. The electrical properties of the ALD-HfO2/Al2O3/H-diamond MIS field effect transistor have also been investigated. The source–drain current and extrinsic transconductance maxima are −42.1mA·mm−1 and 6.2±0.1mS·mm−1, respectively. The effective mobility for the H-diamond channel layer has been determined to be 38.2±0.5cm2·V−1·s−1.
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