Abstract
AbstractThe dark current characteristics of anthracene single crystals are measured for a wide range of field strengths up to breakdown at temperatures of 4, 77, and 293 °K. Above the trap‐filled limit the logarithmic current‐voltage characteristic has slopes of the order of 5 to 7. It is shown that this part of the characteristic can be described by a simple expression. The photovoltages under the action of uv excitation are measured and represented analytically. Using a glow‐curve method it is shown that anthracene crystals have quasicontinuous trap distributions for electrons and holes. Because of their lower concentration the distribution of electron traps is observed as a sequence of discrete trap levels.
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