Abstract
Conducting Rh oxide thin films were prepared by sputtering a Rh target in an Ar and O2 mixed gas. Effects of the oxygen gas flow ratio on the crystallinity, chemical bonding state and resistivity were studied. Amorphous Rh2O3 films were prepared at an O2 flow ratio of 20%. The Rh2O3 films had a relatively high resistivity of 2 mΩcm and a negative temperature coefficient of resistance (TCR) of -1000 ppm/°C, which indicated semiconducting characteristics. On the other hand, amorphous RhOx films with a composition of 1.5 ≤x ≤1.7 were prepared at O2 flow ratios above 40%. Resistivity of these RhOx films were 800 µΩcm and had almost no temperature dependence. Metallic conduction characteristics of RhO2 were assumed to be revealed by the decrease in the oxygen deficiency.
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