ELECTRICAL PROPERTIES OF Al/p-Si STRUCTURE WITH Al2O3 THIN FILM FABRICATED BY ATOMIC LAYER DEPOSITION SYSTEM

Abstract

Al2O3 insulator layer was deposited by atomic layer deposition (ALD) technique on p-type Si [Formula: see text] and the Al/Al2O3/p-Si metal/insulator/semiconductor (MIS) structures were fabricated. The current–voltage ([Formula: see text]) characteristics of these structures were investigated in two different temperatures. The main electrical parameters such as the ideality factor ([Formula: see text]), zero bias barrier height ([Formula: see text]), and series resistance ([Formula: see text]) values were found for 300 and 400[Formula: see text]K. The energy density distribution profiles of the interface state density ([Formula: see text]) were determined from the [Formula: see text] characteristics. In addition, the capacitance–voltage ([Formula: see text]) and conductance–voltage ([Formula: see text]) characteristics of devices were investigated in the frequency range 50–1000[Formula: see text]kHz at room temperature. Frequency-dependent electrical characteristics such as doping acceptor concentration ([Formula: see text]), energy difference between the valance band edge and bulk Fermi level ([Formula: see text]), diffusion potential ([Formula: see text]), barrier height ([Formula: see text]), the image force barrier lowering ([Formula: see text]), maximum electric field ([Formula: see text]), and [Formula: see text] values were determined using [Formula: see text] and [Formula: see text] plots. In addition, the [Formula: see text] values were performed using Hill–Coleman method. According to experimental results, the locations of [Formula: see text] and [Formula: see text] have an important effect on [Formula: see text], [Formula: see text] and [Formula: see text] plots of MIS structure.