Abstract
Alloys from AgSb(SxSe1-x)2 with different compositions were prepared using quenching from the melt. This was done by put the appropriate amount of Ag, Sb, S and Se in an evaluated quartz ampoule, sealed and left at oven in temperature 1273 for 5 hours. Thin films with different composition were deposited by pulsed deposition technique PLD onto glass substrates at ambient temperature. This paper concerned on the investigate effect of composition on structural morphology, and electrical properties. The structure and morphology of the prepoared thin films were checked using X–ray diffraction and atomic force microscope. The D.C conductivity of the AgSb(SxSe1-x)2 thin films with various x content was measured in the temperature range (298-473)K. It was found the electrical conductivity decreased two order of magnitude with the increase of x content. Two activations energies Ea1, and Ea2 estimated from the plot of log conductivity with reciprocal temperature for AgSb(SxSe1-x)2 with different compositions which increased with increasing of x content. The data obtained from Hall effect which are concentration of charge carriers decreased while mobility increased with the increase of x content.
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