Abstract
Hydrogenated amorphous silicon (a-Si:H) thin films were fabricated by Radio Frequency (RF) magnetron sputtering. For solar-cell applications, a-Si:H layers are required to show low dark conductivity and high photoconductivity and, thus, high photosensitivity. Hydrogen flow ratio and working pressure were mainly adjusted to control bonding configurations and hydrogen concentration in the films. At a high working pressure of 12 mTorr, all of the prepared amorphous and microcrystalline silicon films showed a dominant IR absorption peak at 2100 cm −1, which indicates a Si–H 2 stretching mode, grain boundaries and microvoids. When the working pressure was decreased to as low as 3 mTorr with a hydrogen flow ratio of 0.1, the bonding configuration of the films was mainly Si–H as determined by the dominant IR absorption peak at 2000 cm −1, and the photosensitivity of the films was maximized to 760.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
