Abstract
Effects of excimer laser irradiation on electrical properties were investigated for insulating SrTiO3 single crystals, and the mechanism was discussed. A drastic drop of surface resistance from >1013 Ω/cm2 to about 104 Ω/cm2 was observed after irradiation by KrF and XeCl laser light with fluences of about 100 and 200 mJ/cm2, respectively. For laser irradiation with a fluence above these critical values, the surface resistance remained at almost the same, low values. Traces of local melting, in the form of microcracks, were recognized on the surfaces with low resistance. The low-resistance surface had n-type semiconductivity, and the resistivity, electron concentration and mobility were estimated to be 0.2 Ωcm, 5.4×1018 cm-3, 5.4 cm2V-1s-1, respectively, by the Hall coefficient measurement assuming a semiconductive layer thickness of 0.3 µm. On the basis of the result of X-ray photoelectron spectroscopic analysis, the drastic decrease in resistivity is attributed to the generation of oxygen vacancies.
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