Abstract
Current-voltage properties for a Ba1−xKxBiO3/Nb-doped SrTiO3 (0.01 wt%) Schottky junction have been measured and investigated over a temperature range from 5.3 to 300 K. Excellent rectification properties of the junction were observed, with high reproducibility. The barrier height V60 decreased and the ideality factor n increased with decreasing temperature. The modified Richardson plot of saturation current density showed a straight-line dependence. These results may be explained by the existence of interfacial layer or the inhomogeneity of the Schottky barrier height.
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