Abstract
Electrical properties of 50-nm-thick polycrystalline germanium (poly-Ge) films fabricated by pulsed laser annealing were investigated. Analysis of the electrical conductivity using a numerical calculation program revealed that the density of defect states at grain boundaries in the poly-Ge films was a low of 1.1 × 10 12 cm − 2 in contrast to a high density of 2.6 × 10 13 cm − 2 in the case of laser crystallized poly-Si films. Transient photoconductivity measurements using pulsed laser irradiation revealed that 50-nm-thick poly-Ge films had a long carrier lifetime of 3.0 μs.
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