Abstract
TiO2/Si structures were fabricated by electron beam evaporation, and exposed to electron beam irradiation to investigate their electrical properties using the high frequency capacitance–voltage measurements. It was found that samples annealed in oxygen became more radiation resistant than un-annealed samples, which can be explained by the Ti valence variations induced by radiation. The samples were characterized by X-ray diffraction to show the Ti2O3 crystalline phase transformed to anatase-crystalline phase after oxygen annealing.
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