Abstract
TiO2/Si structures were fabricated by electron beam evaporation, and exposed to electron beam irradiation to investigate their electrical properties using the high frequency capacitance–voltage measurements. It was found that samples annealed in oxygen became more radiation resistant than un-annealed samples, which can be explained by the Ti valence variations induced by radiation. The samples were characterized by X-ray diffraction to show the Ti2O3 crystalline phase transformed to anatase-crystalline phase after oxygen annealing.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
