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Abstract
Single ZnO nanorods with diameters of 100nm were directly grown on GaN surface by using low-temperature hydrothermal synthesis. Individual nanorods were removed from the substrate and placed between the Au contact pads and the current voltage measurement was proceeded to characterize the electrical properties of the ZnO nanorods. By using thermionic field emission model of Padovani and Stratton , the resistivity, carrier concentration, electron mobility can be extracted with the values of 0.14 Ωcm, 9.2x1016/cm3,33.82cm2V-1s-1, respectively. The single ZnO nanorods also showed high sensitivity to the UV light (325nm). Under the UV illumination, the UV induced current increase nearly 10 times than the dark current. In addition, the nanorods also exhibited a slow UV response due to the effects of the oxygen ions on the surface of the nanorods.
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