Abstract
Polycrystalline PbTe samples have been implanted by Sn + ion at 200KeV with doses of 6×10 16 and 1×10 17 ions/cm 2 in order to create a modified Pb 1-x Sn x Te layers with gradation of carrier concentration. The electrical conductivity, Hall coefficient and thermoelectric power measurements have been carried out at 300K on the implanted samples. The effect of Sn + ion implantation on structure of PbTe has been investigated using X-ray Diffraction (XRD). Scanning Electron Microscope (SEM) and X-ray Photoelectron Spectroscopy (XPS). The results indicate the possible presence of Pb 1-x Sn x Te (x=0.2∼0.25) phase during the ion-implantation processes.
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