Electrical properties and stability of low temperature annealed (Zn,Cu) co-doped (Ni,Mn)3O4 spinel thin films

Abstract

ABSTRACT Toward the development of infrared (IR) detectors, nickel–manganite-based thin films were initially prepared from (Ni0.2Mn2.8–x Cu x )Cl2 (0.010 ≤ x ≤ 0.040) solutions using the liquid flow deposition (LFD) method. The influence of Cu on the negative temperature coefficient of resistance (NTCR) characteristic of the films annealed at 400°C was investigated. It was found that the incorporation of Cu can effectively enhance electrical conductivity; however, it degrades both the thermal sensitivity and stability of the nickel–manganite films. The investigation was extended by further modifying the composition with Zn. The results revealed that by co-doping Cu with a proper amount of Zn the temperature coefficient of resistance (TCR) could be tailored, while a relatively low resistivity (ρ) of the final products was retained. Specially, when 0.01 mol Zn was added to a precursor solution containing 0.025 mol Cu, the resulting specimen possessed a TCR = 2.82% K–1 and a ρ = 820 Ω (measured at RT). More importantly, compared to Zn-free films, the (Zn,Cu) co-doped compositions showed much improved electrical stability, with an aging coefficient (ΔR/R) as low as 4.6%, after aging at 150°C in air for 500 h. The results suggest that the (Zn,Cu) co–doped (Ni,Mn)3O4 thin films have a promising application in IR detectors.