Abstract
New resistivity vs. temperature data for heavily doped single crystal p-type InSb, Ge, GaAs, and GaSb and n-type GaAs are reported, which establish the generality among many semiconductors of the characteristic curve shapes published earlier for n- and p-type Si. The observed resistivity maxima near the degeneracy temperature are believed to be caused by resonance impurity scattering, of which the temperature dependences in the degenerate range are an additional consequence.
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