Abstract
Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin films were prepared by pulsed-laser deposition (PLD) on Pt/Ti/SiO 2/Si substrates and were crystallized by subsequent annealing at 750 °C for 90 min. Crystalline phases in the PZT films were investigated by X-ray diffraction (XRD) analysis. The microstructure and composition of the films were studied by transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), respectively. It is found that the films consist almost entirely of the perovskite phase, but a thin layer of the pyrochlore phase exists at the surface of the films. Electrical properties of these films were evaluated by measuring P– E hysteresis loops and dielectric constants, and the effect of the microstructure on the electrical properties of the PZT thin films is discussed.
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