Abstract

The (Co 41Fe 39B 20) x (SiO 2) 100− x metal–insulator granular films ( x=33, 43, 50, 72 and 100 at.%) with amorphous structure have been obtained by ion-beam sputtering technique. Resistivity and magnetoresistance have been studied in these materials. It has been observed that all the granular composites crystallize within the same temperature region 700–900 K independent of the concentration. Electrical conductance by hopping mechanism with a variable jump length is found to dominate in the (Co 41Fe 39B 20) x (SiO 2) 100− x granular composites containing less than 72 at.% of the metal phase (33, 43 and 50 at.% Co 41Fe 39B 20) at temperatures below 300 K. The negative giant magnetoresistance (GMR) was observed in the same granular composites. The maximum value of the GMR (3.4%) was found in the (Co 41Fe 39B 20) 50(SiO 2) 50 film which is close to the percolation threshold. The GMR is associated with the electron tunneling through the insulator barriers separating the ferromagnetic granules.

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