Abstract
We performed Hall effect measurements and Raman mapping of graphene synthesized by microwave plasma treatment under a low carbon concentration. The Hall mobility and average domain size were estimated to be 100–1000cm2/Vs and around 30–100nm, respectively, which are much higher than those of graphene deposited by conventional plasma chemical vapor deposition. In addition, dark-field transmission electron microscopy images showed domain sizes of around 100nm. Thus, this method is expected to easily produce a large amount of high-quality graphene with high throughput.
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