Abstract
The electrical properties and conduction mechanism of the WOx-based RRAM were investigated in this work. The WOx layer was formed by DC reactive magnetron sputtering on Cu/Ti/SiO2/Si substrate at room temperature. And then RTP was done under 300oC for 30 seconds in oxygen atmosphere. The programming, reading, and reliability behaviors of the device cells were characterized detailedly. The results show that the low programming voltages for SET (1.1 V) and RESET (-0.9 V) process were achieved. The good endurance (>1000) and retention time (104 s) had been demonstrated. In addition, the device is immune to read disturb. The conduction mechanism both in ON and OFF state are oxygen vacancy conductive filament.
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