Electrical properties and chemical compatibility of PZT thick film on Ni substrates

Abstract

The characteristics of Pb(Zr,Ti)O3(PZT) thick films that were printed and fired on Ni substrates were studied. The dielectric characteristics of samples sintered at 850°C on Ni substrates could not be measured due to the formation of a NiO layer at the Ni/PZT interface. The scanning electron microscope and energy dispersive X-ray analysis of cross-sections of the PZT thick films on Ni substrates, and of a mixture of PZT and NiO powders, fired at 850°C, did not indicate the formation of secondary phases. However, the transmission electron microscopy showed around 8% solid solubility of NiO in the PZT. A new structure with a prefired, Au thick-film layer was designed in order to prevent the diffusion of the NiO to the PZT layer during sintering. The dielectric properties of the PZT layers printed and fired on the Ni substrates with the prefired Au electrode were significantly better than those of the layers on the uncoated substrate, the dielectric losses decreased from 0.23 to 0.05.