Abstract
Prototype depletion mode heterojunction-insulated gate field-effect transistors using In0.43Al0.57As as a quasigate insulator were fabricated and their low-frequency properties were evaluated. Typical extrinsic transconductances of gm=20 mS/mm were obtained for devices with gate length of 6 μm which exhibited no direct current drain current instabilities. A qualitative fit to a metal–insulator field-effect transistor (MISFET) model was obtained using the material parameters of the InP and In0.43Al0.57As epilayers and assuming that this quasi-insulator could be represented as a conventional insulator. The equilibrium surface potential has been determined to be −0.05 eV. Capacitance–voltage (C–V) and conductance-frequency measurements made on similar heterojunction capacitors show that the maximum interface state density is in the low 1011/cm2 eV range and confirm the slight depletion of the InP surface.
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