Abstract
Studies of Si, Ge donors and Fe, Mg as acceptors in β-Ga2O3 through temperature-dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods are presented in this chapter. Si and Ge are identified as shallow donors with donor energy of 30 meV instead of DX states. Fe is a deep acceptor with its energy level 860 meV below the conduction band edge. Mg-doped samples present an activation energy of 1.1 eV, but the type could not be resolved. Unintentional donors and acceptors are also discussed including intrinsic defects (i.e., vacancies) and extrinsic impurities. Last, an unintentional donor with energy of 110 meV is presented and the impacts of its incomplete ionization to power devices are discussed.
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